Novel multi-state memory

ABSTRACT

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog techniques including A to D type conversion to reconstruct and process the data. In accordance with the teachings of this invention, the memory array is read with high fidelity, not to provide actual final digital data, but rather to provide raw data accurately reflecting the analog storage state, which information is sent to a memory controller for analysis and detection of the actual final digital data.

RELATED APPLICATIONS

[0001] This application is a continuation-in-part of U.S. patentapplication Ser. No. 08/639,128 filed Apr. 26, 1996, which is acontinuation of Ser. No. 08/193,707 filed Feb. 2, 1994, which is acontinuation of Ser. No. 07/820,364 filed Jan. 14, 1992, now U.S. Pat.No. 5,313,421.

FIELD OF THE INVENTION

[0002] This invention pertains to semiconductor memory devices andparticularly to multi-state memories.

BACKGROUND OF THE INVENTION

[0003] As is well known, in a semiconductor memory cell, data is storedby programming the cell to have a desired threshold voltage. Simplememory cells store one of two states, a logical one or a logical zero,in which case the cell is programmed to either turn on or not turn on,respectively, when read conditions are established, thereby allowing theread operation to determine if a logical one or a logical zero has beenstored in the memory cell. More sophisticated semiconductor memory cellsallow the storage of one of a plurality of memory states greater thantwo, by providing the ability to store a variety of threshold voltagesin the memory cell, each threshold voltage being associated with one ofa plurality greater than two logical states. Such multi-state memorycells and arrays are described, for example in U.S. Pat. Nos. 5,043,940and 5,434,825 issued on inventions of Dr. Eliyahou Harari.

[0004] In order to fully exploit the concept of high density multi-statememory devices, the memory states must be packed as closely together aspossible, with minimal threshold separation for margin/discriminationoverhead. Factors which dictate this overhead are noise, drift(particularly random as opposed to common mode), sensing speed(deltaT=C*deltaV/I), and safety margin guard bands, as well as precisionand stability of reference sources/sense circuits. This overhead must beadded to the memory state width associated with precision of writing thememory cells (again with respect to the reference sources). With aclosed loop write, in which a write is performed followed by a verifyoperation and in which cells which fail the verify operation arerewritten, the relative precision of memory cell to reference source canbe made arbitrarily high by expending more time in writing. Statepacking will then be dictated more by how precise and stable the variousstorage sense points can be separated from one another, a property ofboth memory state stability and how reference points/elements areestablished.

SUMMARY

[0005] Maximized multi-state compaction and more tolerance in memorystate behavior is achieved through a flexible, self-consistent andself-adapting mode of detection, covering a wide dynamic range. For highdensity multi-state encoding, this approach borders on full analogtreatment, dictating analog techniques including A to D type conversionto reconstruct and process the data. In accordance with the teachings ofthis invention, the memory array is read with high fidelity, not toprovide actual final digital data, but rather to provide raw dataaccurately reflecting the analog storage state, which information issent to a memory controller for analysis and detection of the actualfinal digital data.

[0006] One goal of the present invention is to provide self-consistent,adaptive and tracking capability for sensing, capable of establishingboth the data and the “quality” of the data (i.e. the margins). Inaccordance with certain embodiments of this invention, tracking cellsare included within each of the sectors. These tracking cells are set atknown states to reliably establish the optimum discrimination points foreach of the various states. In certain embodiments, this is accomplishedusing as few as one cell per state. However, if better statistics arevital to establishing the optimum discrimination point, a smallpopulation of cells sufficient to establish such optimum pointsstatistically is used. Data from these tracking cells will be the firstinformation from the sector to be read into the controller, in order toestablish the optimum discrimination points for the remainder of thesector data. In order to make these cells track the rest of the sectorsin terms of data history and wear, they are subjected to the samelogical to physical data state translation (rotation) writing as usedfor their associated sectors.

[0007] In accordance with various alternative embodiments of thisinvention, high density multi-state memories are taught which includeparallel, full chunk, A/D conversion of multi-state data, with adequateresolution to provide analog measure of the encoded states; masterreference cell(s) whose prime function is to provide optimum dynamicrange for comparator sensing; Logical to Physical Data scrambling toprovide both intra-sector wear leveling and increased endurancecapability; and intra-sector tracking cell groups, one for each state,included in each sector to provide optimum compare points for thevarious states, and able to adapt to any common mode shifts (e.g.detrapping). In accordance with certain embodiments, a controllerincorporates a data processing “engine” to, on-the-fly, find midpointsof each tracking cell group. The controller also establishes data statediscrimination and marginality filter points. Sector data is passedthrough the controller, giving both the encoded memory state, and itsquality (marginality), for each physical bit. If desired, the controllerdecides what actions must be taken to clean up (scrub) marginal bit databased on the quality information (e.g. do full sector erase and rewriteversus selective write, only). Also, if desired, the invention includesa small counter on each sector, which is incremented each time a readscrub is encountered. When the count reaches maximum allowed, marginalbit(s) are mapped out rather than rewritten and counter is reset to 0.This provides a filter for truly “bad” bits. Similar features areapplied in reverse to write multi-state data back into a sector, usingthe same circuitry as used for read but operated in reverse, to provideself-consistent data encoding. In addition, two alternative embodimentsfor performing verification are taught: using a reference currentstaircase to sequentially scan through the range of states,conditionally terminating each cell as the current step corresponding toits target data is presented to the sensing circuit; and using a fullset of N−1 reference currents of the N possible states to simultaneouslyverify and conditionally terminate all cells. In certain embodiments, atwin-cell option is included in each sector to provide deltaVt shiftlevel associated with cycling driven trapping and channel wearout,triggering sector retirement before detrapping shifts exceed readdynamic range or other potential read errors. This replaces hot countbased sector retirement, greatly increasing usable endurance.

[0008] As another feature of certain embodiments of this invention, acell-by-cell column oriented steering approach, realizable in two sourceside injection cell embodiments, increases the performance of high levelmulti-state significantly, improving both its write and read speed. Itachieves this by applying, in parallel, custom steering conditionsneeded for the particular state of each cell. This offers substantialreduction in the number of individual programming steps needed forwrite, and permits powerful binary search methodology for read, withouthaving to carry out full sequential search operations. Improvedperformance is further bolstered through increased chunk size, madepossible via the low current source-side injection mechanism, whichallows every fourth floating gate element to be operated on, therebyincreasing chunk size.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009]FIG. 1a is a schematic representation of one embodiment of thisinvention which utilizes dynamic sensing of the selected memory cell.

[0010]FIG. 1b is a graph depicting the voltages associated with sensingthe state of the memory cell of the embodiment of FIG. 1a;

[0011]FIG. 2 is a block diagram depicting one embodiment of thisinvention in which trip times associated with reading a plurality ofcells are converted to binary code;

[0012]FIG. 3 is an alternative embodiment of this invention which uses astatic sensing approach utilizing current comparators;

[0013]FIG. 4a is a diagram depicting exemplary state ranges andcounter/A/D resolution for 4-level multi-state encoding;

[0014]FIG. 4b is a diagram depicting exemplary state ranges andcounter/A/D resolution for 8-level multi-state encoding;

[0015]FIG. 5 is a flow-chart depicting the operation of one embodimentof this invention;

[0016]FIG. 6 is a bit map depicting user data and overhead dataassociated with one embodiment of the present invention;

[0017]FIG. 7 is a flowchart depicting in more detail one embodiment ofthe step of processing tracking cell data in FIG. 5;

[0018]FIG. 8 is a block diagram depicting programming and verificationelements suitable for use in the embodiment of FIG. 3;

[0019]FIG. 9 is a flowchart depicting the operation of one embodiment ofthis invention as depicted in FIG. 8;

[0020]FIG. 10, composed of FIGS. 10a and 10 b, is a flowchart depictingan alternative embodiment of this invention suitable for use inconnection with the embodiment of FIG. 8;

[0021]FIG. 11 is an alternative embodiment of this invention whichallows for improved verify processing;

[0022]FIG. 12 is a diagram depicting one embodiment of a twin-cell ofthe present invention;

[0023]FIG. 13 is a diagram depicting one embodiment of a cell suitablefor use in connection with certain embodiments of this invention;

[0024]FIG. 14 is a diagram depicting one embodiment of the cell-readoperation of this invention using the cell embodiment of FIG. 13;

[0025]FIG. 15 is a flowchart illustrating one embodiment of thisinvention with reference to the embodiment to FIG. 14;

[0026]FIG. 16 is a diagram depicting an alternative embodiment of thisinvention in which sensing is performed on a plurality of bitssimultaneously as could be used in conjunction with the embodiment ofFIG. 14;

[0027]FIG. 17 is a diagram depicting one embodiment of this invention inwhich common elements are used for both reading and multi-stateprogramming;

[0028]FIG. 18 is an alternative embodiment of this invention in whichcertain control elements are replicated, one set used for programmingand the other for read/verify operations;

[0029]FIG. 19 is a diagram depicting one embodiment of an array suitablefor use in accordance with the teachings of this invention;

[0030]FIG. 20 is a diagram depicting an alternative array suitable foruse in conjunction with the present invention; and

[0031]FIG. 21 is a graph depicting the distribution of erased celllevels in accordance with certain embodiments of this invention.

DETAILED DESCRIPTION

[0032] A/D Sensing

[0033] A first step in this invention is acquiring the full analog valueof the memory state (e.g. the actual cell current, which in turnreflects the actual stored floating gate voltage VFG). The followingdescribes two alternative embodiments for rapidly sensing andconverting, to digital form, data stored in a large number of physicalcells (e.g. a chunk of 256 cells) simultaneously, each cell capable ofstoring a large number of multi-states (e.g. four states or more), andsensing capable of spanning a wide dynamic range. The basis underlyingboth of these embodiments is the analog property of the memory cell,wherein its current drive capability is in proportion to its storedfloating gate charge (voltage). Consequently, each memory state ischaracterized by its current drive capability (in actuality a narrowrange of current drives, including margin capability). Therefore sensingand discriminating the various states comes down to differentiatingbetween the various drive level ranges. Two exemplary embodiments arenow described for achieving this differentiation.

[0034] A first embodiment is described with reference to FIGS. 1a and 1b, and involves dynamic-type sensing, wherein the bit lines (such as bitline 101) of the selected memory cells (such as cell 102) are precharged(e.g. to 2.5 v), and then the row (e.g. word line 103) of the selectedcells is turned on, preferably using a controlled ramp (e.g. 5 usec risetime) or a stepped staircase (for example over 5 usec), allowing therespective bit lines to discharge through the selected memory cells atrates proportional to their current driving capability. When the bitlines discharge to a predetermined voltage (e.g. 1 v), they flip acorresponding sense amplifier (e.g. sense amplifier 104), indicatingsense achieved. The time taken to flip the sense amplifier from thestart of sensing is an analog measure of the cell drive: the longer thetime, the lower the drive (i.e. cell is more programmed, having morenegative charge on the floating gate as depicted in FIG. 1b).

[0035] Table 1 is an example of sense amplifier trip time to cellcurrent drive capability based on simulation using floating gate cellI-V data. TABLE 1 ICELL (uAmps) 20 30 40 50 60 70 80 90 100 Trip time(usec) 5.4 4.9 4.7 4.4 4.2 3.9 3.7 3.5 3.4

[0036] In the example of Table 1, bit line 101 is precharged to 5 v andtripped at 2.5 v, load capacitance is 1.25 pF and control gate rate ofincrease is 1.25 v/usec, ramped to 7 v in a staircase fashion. Becauseof disturbs, it is undesirable to expose the memory cell drain to morethan 2 v. Therefore the 5 v precharge is, in one embodiment, applied tosense capacitor 105 isolated from the memory cell drain, and the drainis only allowed to charge to a lower voltage (e.g. 1.5 v). With columnsegmentation this drain voltage lowering is, in one embodiment, donelocally, using a segment select transistor to limit the voltagetransferred from a global bit line to the local bit line, such as isdescribed in copending U.S. Pat. No. 5,315,541 assigned to SandiskCorporation.

[0037] In one embodiment, the trip times are converted en masse to abinary code using an A/D approach, as shown in FIG. 2. Time is meteredusing clock 205 which increments master counter 204 which in the exampleshown here is an 8 bit counter. Counter 204 drives lines 209 (8 lines inthis example) which feed into registers 201-1 through 201-N via transfergates 202-1 through 202-N, respectively, with one register for each cellbeing sensed (e.g. 256, 8-bit registers for a 256 bit memory chunksize). At the start of sensing, counter 204 is initialized to zero, andthen starts counting up, with the registers reflecting the count.

[0038] At the point of a cell sensing (i.e. at the sense amplifier triptime), the corresponding sense amplifier flips, which isolates thecorresponding register from counter 204, thereby freezing the time (andits associated binary code) in that register. In this way, each registercontains a binary representation of the analog storage level of thememory cell to the resolution of the A/D (e.g. with 8 bits this givesresolution of approximately 1 part in 256 or about 0.4%).

[0039] To insure both adequate resolution and dynamic range, the clockfrequency (i.e. sampling rate) must be properly chosen. If too fast itwill not span the full range of times needed for a sense amplifier toflip for all possible stored memory cell data values before hitting themaximum count, while if too slow the result will be poor resolution andthe

[0040] risk of inability to discriminate between neighboring states. Inorder to provide some relationship with the memory cell's drivecharacteristics, in one embodiment the frequency of clock 205 isgoverned by a memory cell (or group of memory cells) set at anappropriate drive level. In this way, clock 205 tracks process variationand operating conditions (e.g. voltage and temperature), setting up theoptimum clocking rate to span the cell's dynamic range and associatedmemory states.

[0041] Although this embodiment is relatively simple and effective, itdoes have limitations by nature of its being dynamic. Time constantsassociated with word line and/or bit line delays and their variationscontribute both relative and absolute error. For example, if word lineRC time constants are long relative to ramp (or step interval) times,then there can be significant differences in the times in which cellsalong the word or steering line (or a single line serving as both theword line for selection and steering line for capacitive coupling)experience a given word line steering drive voltage. The consequence ofthis is that cells at different positions along such lines will respondat different times. Also, conversion from cell current drive tocomparator trip time is not exactly linear, because the discharge ratesand characteristics depend on the drive levels of the cell which willvary with the bit line bias level (with conduction tending to decreaseas bit line voltage levels drop, stretching out bit line dischargetime). Also, the bit line capacitance can have a significant voltagedependence arising from junction CV characteristics. This nonlinearityin comparator trip time results in nonlinearity in time in theseparation of states and margins in going from the lowest to the highestcharged memory states (whereas it is desirable to space the memorystates evenly, charge-wise, to get maximum fit of states within thedynamic range and to have uniform margins).

[0042] A second exemplary embodiment removes these limitations by usinga static sensing approach utilizing current comparators, as shown in theexemplary embodiment of FIG. 3. The fixed reference voltage, Vref, ofthe embodiment of FIG. 2 is replaced with a staircase reference current(Iref) source 310, which starts off at a minimum level, Imin, andincrements by ΔI with each count of clock 305 (i.e. after n clock pulsesIref=Imin+n*ΔI). For a given memory cell, when the reference currentjust exceeds the cell current, the associated one of current comparatorsense amplifiers 104-1 through 104-N will flip, freezing thecorresponding count of counter 304 (which increments in sync withstaircase current generator 310) into the corresponding one ofregisters. In one embodiment, the scale factor for staircase currentsource 310 (e.g. its maximum current) is established using one or apopulation of floating gate memory cells (e.g. erased strongly) in orderto provide optimum dynamic range with tracking of process and operatingconditions; i.e. the regulation of current source includes monitoringthe characteristics of one or more floating gate cells dedicated for usein connection with this current source regulation.

[0043] This second embodiment, while a bit more complex, offers bettercontrol, linearity and minimizes or eliminates sensitivity to dynamiceffects. This includes eliminating the need for repetitive, controlledramping of word lines in the case of dynamic sensing, simplifying manyof the timing and associated control operations.

[0044] Once sensing is completed and data is frozen into all registers301-1 through 301-N, it is shifted out, for example, serially. A simpleway to do this is to have the registers 301-1 through 301-N tiedtogether in shift register fashion. In the above example, the datastored in each register each comprises eight bits, requiring an eightline wide bus to shift the full data out of the memory chip (for exampleto a memory controller, such as is described in U.S. Pat. No. 5,430,859assigned to Sandisk Corporation, for sending to requesting devices) inone controller clock cycle, and thus requires eight output pads/pins. Ifdata rate to the controller is less critical while keeping the number ofpads/pins down is important, then the eight bits could be broken down,e.g. shifting out the four MSB bits first followed by the four LSB bitsthrough four pads in two controller clock cycles, or shifting out groupsof two bits four times through two output pads in four controller clockcycles, etc.

[0045] Tracking/Data Scrambling

[0046] As previously stated, one goal of the present invention is toprovide self-consistent, adaptive and tracking capability for sensing,capable of establishing both the data and the “quality” of the data(i.e. the margins). In accordance with certain embodiments of thisinvention, tracking cells are included within each of the sectors suchas those described in U.S. Pat. No. 5,172,338 assigned to SandiskCorporation. These tracking cells are set at known states to reliablyestablish the optimum discrimination points for each of the variousstates. In certain embodiments, this is accomplished using as few as onecell per state. However, if better statistics are vital to establishingthe optimum discrimination point, a small population of cells sufficientto establish such optimum points statistically is used. For example inone embodiment ten physical cells are used for each state, in which casefor 4-state encoding a total of 40 physical cells are used, as part ofthe overhead portion of the sector.

[0047] As will be described below, data from these tracking cells willbe the first information from the sector to be read into the controller,in order to establish the optimum discrimination points for theremainder of the sector data. However, in order to make these cellstrack the rest of the sectors in terms of data history and wear, theyare not repeatedly erased and written into the same, fixed, pre-assignedstates. This is because the amount of wear will be peculiar to thatstate and may not reflect the wear/history of the remainder of thesector. In one embodiment, managing wear, both in terms of insuringuniformity (i.e. intra-sector wear leveling) and in keeping such wear toa minimum, is handled by some method of continuous or periodicre-assignment of each of the logical states (e.g. logical states L0, L1,L2 and L3) to a corresponding physical state (e.g. physical states P0,P1, P2, and P3), an example of which is shown in Table 2. These physicalstates P0 to P3 correspond to specific conduction levels of each memorycell; e.g. P0 is the highest conducting state, P1 is the next highestconducting state, P2 the next highest, and P3 the least conductivestate. A description of this concept applied to two state encoding andtermed “program/inverse program” is disclosed in U.S. Pat. No. 5,270,979assigned to Sandisk Corporation.

[0048] Re-assignment of states with subsequent writes (in one embodimentwith each subsequent write, and in alternative embodiments after aspecific number of writes) is done, for example, by rotation or on arandom number basis. This guarantees that, on the average, over manycycles, only about half of the full possible charge is transported tothe cells, and that the wear of each cell is virtually identical to allothers within its sector. The embodiment utilizing a random numberassignment between logical and physical states has the advantage that iteliminates the possibility of synchronization between the logical tophysical data re-assignment algorithm and variable user data, whichwould defeat such wear leveling. TABLE 2 Physical State AssignmentLogical State #1 #2 #3 #4 L0 P0 P3 P2 P1 L1 P1 P0 P3 P2 L2 P2 P1 P0 P3L3 P3 P2 P1 P0

[0049] All tracking cells for each given logical state are re-assignedto the same physical state, e.g. all ten cells of one tracking groupassigned with the role of storing logical state L1, are set to eitherP0, P1, P2 or P3, for a particular write cycle, dictated by thescrambling algorithm. Given that the tracking cells go through the samescrambling operation as the remainder of the sector, they not onlyreflect the wear of that sector, but also provide the translation meansto convert back from physical to logical state. Since each trackinggroup is given a constant pre-assigned logical state responsibility,when the controller deciphers the various tracking cells groups (e.g.the four groups of ten cells each) it will concurrently establish thetranslation for the sector.

[0050] Resolution Requirements

[0051] More resolution requires more time to sense (more steps in theA/D), more die area associated with the larger registers, more costassociated with shipping data out to the controller (more parallelismdictates more pads and thus an area penalty or, with same number ofpads, takes longer to shift out all the data, and thus a performancepenalty), and more cost associated with processing the data in thecontroller. Inadequate resolution results in limited visibility incommon mode population margin shifts (e.g. due to trapping/detrappingeffects), resulting in larger error in establishing comparator points.This larger error must be included in the multi-state budget, forcinglarger separation between states, and consequently fewer states, i.e.lower multi-state scalability.

[0052] A reasonable resolution target is A/D resolutions equal toapproximately 3% of the state-to-state separation. This providesvisibility into sufficiently small cell current shifts within apopulation to allow meaningful correction (i.e. avoiding margin failurefrom tail bits within a population due to poorer resolution), and doesnot impose such a high resolution that it becomes meaningless vis a visthe various noise and error terms associated with setting and measuringstates.

[0053] Specific examples for state ranges and counter/A/D resolution areshown in FIG. 4a and 5 b for 4-level and 8-level multi-state encoding,respectively. The cell current/floating gate voltage relationship usedin FIGS. 5a and 5 b for read are representative of cell characteristicsbuilt in accordance with the teachings of the present invention, using0.5 micron based flash semiconductor fabrication technology availabletoday, which for example has an I/V slope of approximately 20 uamps/voltwith the zero current intercept (projected threshold) at 4.25 v.

[0054] In the example shown, the state-to-state separation for a fourstate cell is 30 uamps, the A/D resolution is 1 uamps and the dynamicrange covered is 0 to 128 uamps. This gives about a {fraction (1/30)}resolution of the state to state separation (3.3%). A population ofcells written into a given intermediate state is confined to a 10 uampwindow, i.e. spanning ten steps of resolution. Therefore 1 A/D step bitoffers a 10% resolution of the written population distribution, and anycommon mode shift of that magnitude, over time, can be corrected in 10%resolution steps. Therefore, for 4-state a 7 bit A/D is suitable.

[0055] The situation is similar for the eight state example of FIG. 4b,except state to state separation is 15 uamps, and A/D resolution is 0.5uamps, covering the same 0 to 128 uamps dynamic range. This offers thesame percentage of the population resolution, for which an eight bit A/Dis suitable.

[0056] Adaptive Multi-State Discrimination

[0057] The following describes the data flow and handling by thecontroller for each sector read operation. In order to support highspeed, in one embodiment this operation is performed in hardware and/orfirmware. For the purposes of the following discussion, the example of4-state encoding, with 7 bit sensing resolution (providing 128 steps onthe order of 1 uamp per step) and ten tracking cells for each of thefour states, is used. FIG. 4a depicts 4-state encoding with each bit ofresolution corresponding to approximately 1 uamp (therefore about a 100uamp full range). In the embodiment depicted in FIG. 4a, 4-states areshown, physical states P0, P1, P2, and P3. State P0 is established bysetting the cell to have a cell current under read conditions of 90uamps or more (e.g. by erasing the cell to that value). When reading,state P0 is detected when cell current is 85 uamps or more, therebyallowing a slightly relaxed tolerance for reading than writing. Theprogramming levels for states P1, P2, and P3 are also shown in FIG. 4a,as are the looser read current levels for each of those states. Anappropriate guard band is placed between each state such that, forexample, a cell current during read between 75 and 85 uamps is tooambiguous to be associated with either of adjacent states P0 and P1.

[0058] The operation of this embodiment will now be described withrespect to the flowchart of FIG. 5 and the diagram of FIG. 6. First, thereference tracking cell's data is shifted into the controller, one 8 bitset (or byte) for each cell. This data is then processed as illustratedin more detail in the flowchart of FIG. 7, starting with the firsttracking cell group assigned to logical state L0 as described in Table2. The function of these bits is to establish the optimum compare pointfor the L0 state by first establishing where the center of thepopulation of tracking cells placed into the L0 state is. This can beaccomplished on the ten cells per state population by continuouslysumming each successive data of the ten L0 cells, giving accumulation ofthose ten cell's data. It is desirable to maintain a max and minregister concurrently, in order to minimize chance of error from anisolated, errant cell, either high or low. This is done by comparingeach successive piece of data to the previously stored comparator dataand at each compare operation storing the higher (lower) into the max(min) comparator. Once data from all ten cells have shifted in, it isprocessed to establish the filter point, for example by subtracting themax and the min from the sum and dividing the result by 8 (i.e. shiftedto right three times), giving the average storage level of the L0assigned tracking cells. Rounding to the nearest number is, in oneembodiment, accomplished by shifting to the right three times buttemporarily storing the third bit shifted and then summing this bit withthe shifted value. This is then repeated for the L1, L2 and L3 trackingcell population, at which point the system has determined the physicalto logical conversion for each state. In one embodiment, this conversionis performed by ordering the L0, L1, L2, and L3 states into descendingorder, and then matching this to the corresponding physical stateassignment as shown in Table 2. For example, if L0 happens to correspondto physical state P0 it will have the highest value of the four states,if L0 corresponds to physical state P1 it will have the next highestvalue, and so forth, and likewise for states L1, L2, and L3. If afterordering the order is L0, L1, L2, L3 then state assignment #1 of Table 2was used. On the other hand, if the order is L1, L2, L3, L0 theassignment #2 was used, and so forth per Table 2. In this embodiment,the optimum discrimination points between the four physical levels, P0,P1, P2, and P3 are established by calculating the midpoints between P0and P1, P1 and P2, and P2 and P3. Slightly better precision is achievedby postponing the division by 8 for the individual ten cell groups untilafter summing P0 and P1, P1 and P2, etc., at which point the average ofP0 and P1 is obtained by summing P0 and P1 and dividing by 16 (shiftingfour to the right with provisions for rounding) and similarly for P1 andP2, and P2, and P3, thereby establishing three compare values, C1, C2,C3, respectively, which are shown in FIG. 4a as current points 80, 50,and 20 between states P0, P1, P2, and P3.

[0059] This then gives the optimum compare or filter points for the restof the sector's data, which is now shifted in. As data is passedthrough, it is sifted through a set of comparators (for example, asdescribed later with reference to the flowcharts of FIGS. 5 and 7) setat those compare points to establish their state; i.e. higher than C1,(making it state P0), between C1 and C2 (making it P1) between C2 and C3(making it state P2) or lower than C3 (making it state P3). These arethen translated to their corresponding logical states, based on thespecific logical to physical assignment used, as discussed above. In oneembodiment, compare points C1, C2, C3, loaded into the comparators areadaptive in nature, established by the sector itself via the trackingcells. In this way the sensing tracks the properties of the populationof cells within the sector, their operating voltage and temperatureconditions, history and wear, and any common mode drift, as for examplemay arise from detrapping of gate oxide trapped charge, accumulatedduring write cycling. Since such detrapping is also present in thetracking cells, they establish the optimum point for sensing, whateverthe degree of detrapping, provided their conduction remains within thedynamic range of cell state sensing capability (i.e. ability to stilldiscriminate between the various states), and the mechanism is trulycommon mode, with minimal dispersion.

[0060] In one embodiment, this adaptive adjustment of the compare pointsis performed in a continuous, real time manner. In an alternativeembodiment, the optimum compare points for the L0 state as well as theother states L1-L3 are established periodically as part of a maintenanceoperation, and not in real time as actual data is being read, to reduceimpact on system performance. This latter approach improves performanceby eliminating the repetitive overhead time associated with processingthe tracking cell data. In one embodiment, it is invoked on apredetermined read interval basis as part of a read/margins checkout,and/or invoked in the rare event of read marginality or failure. Thisgives the ability to recover data or restore margins through datarewrite using the most optimum read reference conditions via thetracking cells.

[0061] In one embodiment, a sector is broken down as shown in FIG. 6, toinclude user data and overhead bytes. The overhead bytes include aplurality of reference tracking cells for monitoring the condition ofone or more cells known to be programmed to each of the logical statesin the multi-state memory. The overhead also includes, if desired,header information such as address information, ECC bits, bit and/orsector mapping related information, and counts of the number of writesto the sector. Referring again to FIG. 5, as the rest of the sector'sdata is read and processed using the compare points established based onthe referenced tracking cell's characteristics, a decision is made as towhether the data is acceptable or not. If not, gross defect managementis invoked, such as described in U.S. Pat. No. 5,602,987. On the otherhand, if the data is acceptable, a decision is made as to whether thedata is “clean”, i.e. of a sufficiently high quality that there no datamargin or ECC related problems. If the answer is yes, the data is sentout to the host without further intervention; conversely if the answeris no (i.e. the data is not clean), the necessary error correction or“clean up” step is invoked thereby not only sending the data out to thehost but also insuring that the corrected data is clean upon subsequentreads.

[0062] Data Quality Assessment and Response

[0063] As described above, one feature derived from this invention isthe ability to concurrently determine not only the data itself but alsothe “quality” of each data point, or its margin, with respect to theabove described compare points. Even when a bit of data is readcorrectly, if it gets too close to a compare point, it may becomeunreliable sometime in the future, giving erroneous readings due tonoise sensitivity, additional margin shift, or change in operatingconditions arising from power supply or temperature variation.Therefore, the quality measurement achieved by this invention provides afailure look-ahead capability, something dealt with in prior art, usingspecial read-under-margin operations. Such prior art read-under-marginoperations generally involve multiple pass reads, invoked under specialconditions or circumstances, and requiring special circuitry (which mayinclude controlled changes to reference/sensing circuitry or specialcell biasing operation) to establish the needed margin differentials.Often, the accuracy or resolution of such differential means is limited,forcing larger margins than absolutely required. In the case ofmulti-state, this would dictate wider memory threshold voltage windowsper state, and consequently wider voltage separation between states,thereby resulting in fewer states available for a given cell's dynamicvoltage range, and consequent lower memory storage density per cell.However, with the novel approach of the present invention, the margin or“quality” of the data is a natural byproduct of each read operation,requiring no special modes or events to initiate it, and allowing thesystem to instantly react to any detection of marginal data. In essence,the capability of a “look ahead data recovery” is automatically includedeach read operation. However, instead of such margining operation beingconsidered a very rare operation for a very rare event, in accordancewith the present invention, the trade-off made in order to achieve highdensity multi-state is to allow a substantially higher incidence of suchmarginality, with such marginality being made manageable by providing ameasure of this marginality as part of the standard read operation.

[0064] In one embodiment, the specific way such marginality detection isimplemented includes, around each of the compare values C1, C2, C3, anadditional pair of values C1+del, C1−del, C2+del, etc., shown in FIG. 4aas “poor margin filter”, and associated comparators (not shown). Anydata falling between the compare points C1, C2, C3 and their associated+/−del points is tagged as marginal (e.g. if state P2, which fallsbetween compare values C2 and C3, is detected to be between C2 andC2-delta or C3+delta and C3, it is then tagged as marginal).Consequently, each piece of 4-state data can have a three bit result,the first two bits, A and B, for the actual data and a third bit, Q, forits marginality or “quality” (e.g. 0 if OK and 1 if marginal), asdepicted in Table 3. TABLE 3 NO MARGINALITY MARGINAL RESULTS PROBLEMSDATA A 0 0 1 1 0 0 11 B 0 1 0 1 0 1 01 Q 0 0 0 0 1 1 11

[0065] In one embodiment, the quality of the data includes additionalinformation, for example whether the sensed parameter (e.g. cellcurrent) is too high or too low with respect to the center of thatstate's population (e.g. for state P2, if found between C2-delta and C2it is too high, whereas if between and C3 and C3+delta it is too low).This allows clean up reaction conditional oil its direction ofmarginality. For example, if a memory cell's marginality is aconsequence of being shifted towards being too heavily programmed, thecourse of action is to re-erase and program that data as is part of afull sector data scrub operation. On the other hand, if a memory cell'smarginality is such that it is shifted towards being too heavily erased,recovery of proper margin for the state of the memory cell isaccomplished by programming only that one memory cell slightly in orderto regain its needed margin or “quality”. An example of the latter isthe case of relaxation of trapped channel electrons (which canaccumulate after a large number of writes to a cell or a group of cells)which causes cell margins to drift from a more to a less heavilyprogrammed condition. In such a case, it is sufficient to add someprogramming operations to regain cell state margins; no sector erasebefore programming is required.

[0066] In one embodiment, a count is stored within each sector as partof the sector's header whose function is to be incremented each time acorrective action associated with a read scrub takes place. Once thiscount reaches a maximum allowed level, CMAX, the corrective actioninvoked is to map out the marginal/failing bits, whereas prior toreaching this CMAX value, data is rewritten without such mapping. Thisembodiment preserves the sector longer prior to the entire sector beingretired from service, by avoiding nuisance marginalities resulting inexcessive bit and sector mapping, while filtering out the truly bad bitswhich should be mapped out. Once the CMAX count is reached for a sectorand the failing marginal bit is mapped out, the counter is reset to zeroand the procedure is repeated.

[0067] Multi-State Writing

[0068] Writing the multi-state data is now described with reference tothe exemplary circuit diagram of FIG. 8 and the associated flow chart ofFIG. 9. With reference to FIG. 8, the components located within thedashed line indicate components which are replicated for each sector.Following the data unconditional sector erase, data is written into thatsector on a chunk by chunk basis. Starting with the first chunk, thefirst intermediate state, state P1, is placed into the programmed state,which is initiated by using a short, low voltage VCG pulse (for exampleapproximately 4 usec at 2 v control gate bias) followed by a verify readagainst a reference current set at the level appropriate for state P1.For bits within the chunk targeted to receive this programming, butwhich become sufficiently programmed, an internal circuit locks outfurther programming of those bits, while targeted cells, stillinsufficiently programmed, experience the next programming pulse, whichis of the same width as the first, but has incrementally higher VCG(e.g. 200 mV higher), again followed by verify. This sequence ofprogramming with incrementally higher VCG followed be verify continuesuntil all state P1 cells targeted within the chunk are verified, oruntil a maximum VCG is reached (in which case defect management isinvoked). Then the next intermediate state, state P2, is written, insimilar fashion to the first intermediate state P1, but using thereference current setting associated with that state, and starting witha VCG level appropriate for reliably programming that state in theshortest time. This procedure is repeated for each state until allstates in the chunk are programmed and verified, and the whole processrepeated on the remaining chunks on a chunk by chunk basis.

[0069] An alternative embodiment, depicted in the flowchart of FIG. 10,provides an increase in speed. In this embodiment all states within achunk of bits are programmed concurrently in a single VCG staircaseprogression as follows. The data to be written into the chunk is shiftedinto the corresponding registers (e.g. register 43 of FIG. 8), exactlymirroring the readout operation, and the corresponding bit RS latch 46is set enabling its associated bit line driver. Associated with eachphysical data state, P0, P1, P2, P3 is its register count andcorresponding current level. After each programming pulse the referencecurrent staircase is invoked in analogous fashion to the read operation,with the master counter concurrently incremented. A comparator circuitassociated with each register (formed of transfer gate 41 and XOR gate42) compares the input data (i.e. count) stored in register 43 to thatof master counter 44. When a match occurs, the program lockout featureupon verify is enabled. Actual lockout only occurs when thecorresponding cell is sufficiently programmed to pass read verify withrespect to the associated reference current setting, (i.e. programmedinto the associated physical state). Once verify is successful, NANDgate 45 resets RS latch 46, disabling its associated bit line driver 47,and resulting in all subsequent programming of that cell being disabledfor the remainder of the sector write operation. If verify fails, thecell will receive the next VCG incremented programming pulse followedagain by the scanned current source/master counter verify procedure.

[0070] Unlike reading, which calls for use of the entire currentstaircase to resolve the state to full analog precision, thewrite/verify operation only needs to use those reference currentsettings and associated counts specific to the set of memory states,e.g. specific to states P1, P2, P3 as predefined (P0, being the erasedstate, is excluded and inhibited from programming from the outset). Thishelps speed up the verify process by having three settings in the caseof 4-states, in place of 128 settings exemplified for the read operationof FIG. 4a, where 128 settings allows for quality determinations to bemade. Therefore, as illustrated in the example of FIG. 10, each verifyconsists of a three step staircase operation in which the first stepconsists of setting up (e.g. rapidly incrementing up to) the firstreference current level associated with physical state P1, includingconcurrently setting up the master counter (e.g. counting) to thecorresponding counter value, performing a read/sense operation, andlocking out from further programming any cells which both match theirregister value to that of the master counter and are read as programmed(with respect to the corresponding reference current setting). Eachfollowing step of the three step operation consists of setting up (e.g.rapidly counting up to) the next data current level and correspondingreference current setting and repeating the read/sense operation,identically to the first step, until all three steps are completed.

[0071] Note that it may not be necessary to have a full match of the 8bits, only that a sufficient number of MSB (most significant, or ofhighest current weight bits) match. This is most applicable when thereare much fewer allowed states and corresponding cell current targetsthan resolution of the A/D. In this case, as long as the MSB bitsuniquely differentiate each of the various states (e.g. there are aminimum of two MSB bits for 4 state and 4 MSB bits for 16 states) onlythose MSB bits are required for the exclusive OR. This will save somearea associated with exclusive OR circuitry, but does restrict somewhatthe current assignment flexibility for each state.

[0072] This program/3-step verify procedure is repeated, with VCGincremented in each subsequent program step, until all cells in thechunk are verified or max VCG level is reached, as described previously.This entire operation is then repeated for all remaining chunks of thesector, at which point sector multi-state date writing is complete.

[0073] A significant advantage of this novel approach is that it can beextended to a large number of multi-states (e.g. 16) withoutsubstantially impacting write performance, other than that required forimproved resolution (e.g. more and smaller VCG steps, or lower drainprogramming voltage VPD, to slow down programming rate), and theadditional time needed to sense/verify each of the additional states.The latter, being a read operation, tends to be much faster thanprogramming, and therefore should not substantially impact writeperformance.

[0074] An alternative embodiment which speeds up the verify process isdepicted in the diagram of FIG. 11. In place of the single adjustablereference current source, multiple current sources (or parallel tappoints of a master current source) are used. In one embodiment, thenumber of current sources is (n−1), where n is the number of states,since a current point is not needed for the fully erased state. Adata-in register of size K is used for each cell in the chunk, where2{circumflex over ( )}K=n. The information written into the dataregister by the controller at the start of write is used to select oneof the n−1 current levels during verify, dependent on the particularstate. Upon verify, all cells of the chunk are compared simultaneouslyto their corresponding particular reference target in a single verifyoperation, locking out further programming, on a cell by cell basis, ifsuccessful. This allows full verify to complete in one paralleloperation, as opposed to the multi-step serial operation in thepreviously described embodiment, substantially improving verify speed.The cost is the requirement of the multi-current sources, counting andassociated selection circuitry within each bit of the chunk. As in themulti-step embodiment, the requirement of data-in register can be servedby a portion (e.g. the MSB portion) of the existing readout register.The exclusive OR used in the embodiment of FIG. 8 is now replaced withstraight decoding to select the appropriate current source.

[0075] Twin-Cell Relaxation Alarm

[0076] An additional feature of the adaptive multi-state discriminationsensing of the present invention is the ability to put bounds to extremestates, an upper bound for the highest state (e.g. physical state P0)and lower bound for the lowest state, assuming that this lowest state isnot already in cutoff. When the extreme states (as for example reflectedwithin a subset of the tracking cells) cross those bounds, the data isdeemed to be outside the limits of safe detectability vis a visavailable dynamic range, and sector data either needs to be refreshed(rewritten) or the sector mapped out, replacing it with a spare sector.However, this does not eliminate the need for maintaining a cumulativecount of the number of write operations experienced (referred to as “hotcount”) per sector, since there is no warning at the time of writingthat, once written, such excessive shift may occur. Such warning is thefunction of a “hot count ceiling”; to put an upper bound to the amountof cumulative cell wear allowed, forewarning the possibility of excesstrapped charge and associated margin loss due to its subsequentdetrapping, termed relaxation. If such relaxation exceeds a criticalvalue, the resulting common mode shift of all cells (noting that someform of data state rotation is being used to keep wear on all cellswithin the sector uniform) within the sector, typically from lessconductive to more conductive levels, becomes sufficiently large toprevent discrimination between the highest two states (fully erasedstate and state just below it); i.e. drift exceeds dynamic range of thesystem. In order to avoid such failure, sectors cycled to such hightrapping levels must be retired.

[0077] The hot count is an indirect indicator of such trapping, since inaddition to the number of cycles experienced, cumulative trapping issensitive to other factors such as duty cycle of the write operation,time between writes, operating and non-operating temperature exposure,etc.; i.e. history/details. When hot count is used as criteria formapping out a sector, it must assume worst case conditions to insure nofailure. However in practice, systems using such memories rarely, ifever, experience such worst case history exposure under actualapplication. Therefore, mapping out of a sector based on cumulative hotcount is often excessively premature for practical applications.

[0078] An alternative embodiment uses a “Twin-Cell” trapping gaugeincluded within each sector, whose function is to detect directly theamount of channel trapping shift which is responsible for therelaxation. This provides a direct measure of the amount of wearactually seen by cells in the sector, comprehending both cumulativewrite cycles or hot count and history of sector exposure. Only when thiscell's shift reaches a critical value will the sector be retired, and nohot count information is required to make this decision. This allowsmuch higher endurance capability in actual system use than can be safelyprovided via hot count because, unlike hot count which can only providea general indication of cumulative wear (since it cannot gauge weardirectly, only exposure), and therefore the hot count must be heavilyguardbanded (i.e. allowing minimum number of writes to accommodate worstcase wear), the twin cell's direct measure of wear can minimize theamount of such endurance guardband.

[0079] One embodiment of a Twin-Cell of the present invention isdepicted in FIG. 12 and, consists of a cell 600 having a single floatinggate 601 but two separate sensing channels, one channel 602 being aread/write channel (R/W), the other channel 603 being a read-only (RO)channel. Cell 600 is designed to match actual memory cells, e.g. bytaking two adjacent memory cells and tying their floating gatestogether. Programming of cell 600 is performed through the read/writechannel by raising bit line BL2 to a programming voltage (for exampleabout 7 v), and grounding bit line BL1, while bit line BL0 is floated(or grounded). In this way, all the stress and trapping associated withhot electron programming is confined to the read/write channel 602.Using the A/D read of read/write channel 602 followed by A/D reading ofread only channel 603 and finding the difference (e.g. by subtracting)gives a measure of channel trapping (delta). Early in a sector's life,with low cycling exposure, this delta is close to zero, while withprogressive cycling the difference grows, with the read only channel 603giving higher A/D counts (appearing more erased) compared to read/writechannel 602.

[0080] The state set and used for useful comparison is, in oneembodiment, a middle intermediate state, offering both the widest rangeand the average wear of a cell. When the delta exceeds a critical value(e.g. 20 counts in example of FIGS. 5a and 5 b, corresponding to a cellcurrent shift of 20 uAmps and 10 uAmps for the four and eight stateencoding, respectively) the sector is at its limit with respect towearout/relaxation or other potential read and reliability problems andis retired.

[0081] In summary, key points described thus far in this specificationfor supporting high density multi-state are:

[0082] 1. Parallel, full chunk, A/D conversion of multi-state data, withadequate resolution to provide analog measure of the encoded states;

[0083] 2. Master reference cell(s) whose prime function is to provideoptimum dynamic range for comparator sensing;

[0084] 3. Logical to Physical Data scrambling to provide bothintra-sector wear leveling and increased endurance capability of abouttwofold.

[0085] 4. Intra-sector tracking cell groups, one for each state,included in each sector to provide optimum compare points for thevarious states, and able to adapt to any common mode shifts (e.g.relaxation). It also provides translation of data rotation.

[0086] 5. Controller incorporating a data processing “engine” a) to,on-the-fly, find midpoints of each tracking cell group, b) with which toestablish data state discrimination and marginality filter points, c)through which sector data is passed, giving both the encoded memorystate, and its quality (marginality), for each physical bit, d)optionally, to decide what actions must be taken to clean up (scrub)marginal bit data based on the quality information (e.g. do full sectorerase and rewrite versus selective write, only).

[0087] 6. Optionally to include a small counter on each sector which isincremented each time a read scrub is encountered. When the countreaches maximum allowed, marginal bit(s) are mapped out rather thanrewritten and counter is reset to 0. This provides a filter for truly“bad” bits.

[0088] 7. Same means are applied in reverse to write multi-state databack into a sector, using the same circuitry as used for read butoperated in reverse, to provide self-consistent data encoding. Inaddition, two alternative embodiments for performing verification aretaught:

[0089] 7a. Using a reference current staircase to sequentially scanthrough the range of states, conditionally terminating each cell as thecurrent step corresponding to its target data is presented to thesensing circuit.

[0090] 7b. Using a full set of N−1 reference currents of the N possiblestates to simultaneously verify and conditionally terminate all cells.

[0091] 8. Twin-cell option can be included in each sector to providedeltaVt shift level associated with cycling driven trapping and channelwearout, triggering sector retirement before detrapping shifts exceedread dynamic range or other potential read errors. This replaces hotcount based sector retirement, greatly increasing usable endurance.

[0092] Enhancing Multi-State Speed by Utilizing Column Oriented Steering

[0093] An important goal for multi-state is achieving competitive speedto two-state devices, with respect to both write (data programming) andread. The reason that maintaining comparably high performance isdifficult for multi-state, as compared to binary encoded data,originates from the considerably tighter margin requirements associatedwith multi-state encoding (given a limited total memory window budget),coupled with the fact that the information content per cell increasesonly logarithmically for a linearly increasing number of multi-statelevels (i.e. 2^(n)levels gives only n bits of information). So alongwith margins, performance becomes a victim of the diminishing returnsassociated with increasing levels of multi-state.

[0094] In the embodiment discussed above with reference to FIG. 10,write performance is heavily impacted by having to progressively andcarefully go through each state, the progression requiring a sequential,multiple pulse/check methodology to carefully set the state, although inseveral embodiments verification speed can be increased, as discussedabove. For example, to implement 4-state: erase sets up physical stateP0; a first VCG staircase of up to 7 pulse/check steps sets up physicalstate P1; followed by a second group of up to 6 pulse/check steps to setup physical state P2; terminated with a last programming step to set upphysical state P3; giving a total of 14 pulses to write two bits ofinformation, 7 pulses per bit, in place of the one pulse per bit forwriting binary. Projecting this to 8 level multi-state, the total numberof pulses would be more than 30, a further slowdown to more than tenpulses per bit.

[0095] Thus far, read performance has not been impacted for two reasons.The first is the feature of concurrent multi-state sensing usingmulti-leg cell current mirroring to n−1 sense amps (e.g. three senseamplifiers for 4-state). The second is the stream read featureappropriate for mass data storage, wherein, other than latency, theactual cell read time is hidden by the stream read implementation whichsimultaneously shifts out a large chunk (e.g. 256 bits) of previouslyread data while current data is being sensed.

[0096] For more aggressively scaled multi-state implementations, both ofthe above features will become inadequate. With respect to the first,the use of static current sensing becomes increasingly unattractive,both because of increasing IR drops with physical scaling and increasedmemory window requirements while sensing margins decrease, and becauseof the higher power consumption associated with high value multiplecurrent levels. A more attractive way to sense multi-states is viavoltage margining, which requires only minimal cell current (as forexample using dynamic type sensing), but dictates stepping through therange of control gate voltage margin levels spanning the states (for nstates, this means a minimum of n−1 steps), an example of which is givenin the above referenced analog dynamic-type sensing embodiment. Thisimpacts the stream read feature however, because now the time consumedin actually stepping through the various margin levels, followed bysensing, increases greatly. When combining this with progressive demandfor higher-still data rates in mass storage, it will become increasinglydifficult to exploit stream read to achieve enhanced performance. Inaddition, write performance can also be significantly impacted byinternal read speed limitations, since read is an integral component inreliably setting the individual states (via program/verify loops), aswell as for post write sector data checking.

[0097] So with more aggressive use of multi-state for scaling, based onthe above scenario, performance will continue to decline. The abovereferenced analog sensing embodiment improves performance by supportinga large degree of parallelism. Greater parallelism is one way to retardthe decline in performance associated with increasing numbers of cellstates. However, the use of a virtual ground array (imposing aseparation between simultaneously addressable cells) plus is theconstraint of a 512 byte sector size granularity, places a limit on howfar parallelism can pushed.

[0098] The embodiments of this invention described in the following,section offer a solution to the above performance limitations, bysubstantially cutting down the number of discrete steps required forboth programming and read, while preserving the desirable featuresassociated with analog/voltage margin sensing taught by the presentinvention.

[0099] Given that a dominant controlling element allowingdifferentiation between the various multi-state levels is the controlgate (or equivalently termed steering gate), the key to reducing thenumber of discrete steps used for both read and write is tosimultaneously apply, to the full group (chunk) of cells, control gatevoltage values associated with each cell's particular data staterequirements, on a cell by cell basis.

[0100] In a row oriented sector, in order for the control gate to beindividually adjustable for each cell, it cannot run in the row linedirection, since it then becomes common to all cells which are to besimultaneously operated on. Rather, it needs to run in the column (bitline) direction, which allows it to both be individually adjustable on acell by cell basis, and individually responsive to the sensing result onthe associated cell bit line. The basic elements of one embodiment ofsuch a cell are shown in FIG. 13. Since control gate 71 runs parallel tobit lines 72-1 and 72-2, control gate 71 cannot also serve as the selectline (which is the usual case in EPROM and FLASH memories), since uniquecell selection along a bit line dictates that the select line runperpendicular to the bit line. This forces the select line to run in adifferent layer, which in one embodiment is a poly3 line with thecontrol (steering gate) being a poly2 line and the floating gate builtfrom poly1. Specific exemplary embodiments of cell structures suitablefor use in conjunction with this aspect of the present invention aredescribed later.

[0101] Cell Read Operation

[0102] A cell as in FIG. 13 is read using the control gate in an A to Dtype binary search, as illustrated in the exemplary embodiment of FIG.14, and the flowchart of FIG. 15. Each sensing circuit consists of SenseAmplifier (SA) comparator 81, having one input lead which receives aninput signal from memory cell 99 via bit line 82-2, and another inputlead receiving an input signal from a global reference circuit (notshown) which provides reference signal Iref. The output of comparator 81is used to update a corresponding n-bit Control Gate Register Element(CGRE) 83, the number of bits governed by required sensing resolution(e.g. if a 1 in 64 resolution is desired, a six bit register is used).The value stored in CGRE 83 is then used to provide the next controlgate read VCG voltage, via the corresponding Next Step Processor (NSP)84, in a successive approximation scheme.

[0103] Following is an example of the read operation flow, as depictedin the flowchart of FIG. 15. CGRE 83 is a 6-bit binary register element,with a corresponding dynamic range on the control gate (via NSP 84) of 0v to 7.875 v in 125 mv steps. Read starts with the binary value 100000(Nold) loaded into the CGRE, giving the midpoint VCG of 4 v. The outputfrom sense amp 81 is then fed back into control gate register 83, viaConditional Element 89, according to the relation:

Nnew=Nold+Output*DN;

[0104] where (for flowcharting convenience) Output is defined as:

−1 if Icell>=Iref, and

+1 if Icell<Iref;

[0105] and where DN=010000, giving next CGRE (or VCG) of:

010000 (or 2 v) if Icell>=Iref, and

110000 (or 6 v) if Icell<Iref.

[0106] In this way, if cell current is higher than Iref, the next VCGwill be lower, reducing the cell current. Along with this next VCG, thenext Nnew=Nold and the next DN=DN/2 are generated by Next Step Processor84. This binary search continues five more times (for a total of 6passes), wherein the last CGRE 83 value becomes the digital equivalentof the floating gate memory state. If the memory cell uses an 8-level(three logical bits/cell) multi-state encoding, this gives three bits ofresolution between states for state-to-state discrimination,guardbanding, margining, etc. Data can then be processed in ways similarto those described in the afore- referenced Analog Sensing embodiment,the difference here being the rapid binary search methodology (asopposed to one-step-at-a-time sequential search), which for 1 in 64 bitresolution represents a 10× performance improvement (six steps in placeof a possible total of around 64 steps).

[0107] In one embodiment, sensing is extended to a full chunk of bits(e.g. 128 bits per chunk), wherein each sensing circuit contains its owncorresponding SA, CGRE, and NSP elements, as is depicted in theembodiment of FIG. 16, in which the operation of each sensing circuit isconditional on its corresponding memory cell. In this way, the strengthof the binary search approach is exploited to recover most of the lostread performance. For example, comparing the above example to atwo-state read, assuming that each individual step of the binary searchtakes a comparable amount of time as that of the two-state sensing, thenthe total time expended in the multi-state read is equal to 6 binaryreads. For 8-state encoding, three bits of information are extracted,resulting in a read time per logical bit of only twice that of binarystate reading. Given that margin information is concurrently availableas well (as described above), this offers an excellent level of readperformance, consistent with a stream read implementation.

[0108] Cell Programming Operation—Programming Phase Specific

[0109] In certain embodiments, the same elements used for reading arealso applied to accelerate multi-state programming, again optimized tothe targeted memory state on a cell by cell basis, as illustrated in theexample of FIG. 17. Here, the CGRE X83 is initialized with the optimumsafe starting value for the particular state (this may come from a setof updatable parameters stored within the sector). In memory cells whosemagnitude of programming (e.g. programming Vt) increases with increasingVCG, this optimum safe starting point is the highest value of VCGallowable that will not cause the memory cell to program excessively,overshooting its targeted state (i.e. overshooting its allowed staterange). Starting at lower values than this optimum value, while safe,costs more programming time, because the earlier programming pulses donot provide a sufficient magnitude of programming towards the targetedstate, thereby decreasing write speed. In one embodiment, a differentrelationship of VCG with CGRE from that of read is used to satisfydynamic range for programming (e.g. by adding constant voltage Kprog asindicated in the exemplary embodiment of FIG. 17). Following eachprogramming pulse, a verify operation is performed. In the class ofcells described above, if programming margin target is not achieved, theCGRE value is incremented by 1, with a corresponding incremental voltageincrease on VCG via NSP element 191 for the next programming step,whereas if margin is reached, further programming on that bit is lockedout, by disabling further application of programming voltage on itsassociated bit line and optionally eliminating application of VCG aswell.

[0110] In one embodiment, this operation is performed simultaneously onall bits within the chunk, each bit starting at its optimal VCG,conditional on its corresponding to-be-programmed data. In this way,programming is completed in about six steps, relatively independent tothe level of multi-state (e.g. 4, to 8, or 16 level multi-state cellsare, in accordance with this embodiment, programmable in a comparablenumber of pulses), in place of the more than 30 programming stepsindicated earlier for a fully sequential 8-level multi-state programmingembodiment. This not only represents a 5× write speed improvement, butgiven that three bits are being encoded, this gives an effective numberof programming/verify passes of two passes per bit, only twice that ofbinary encoding. Since performance of a full write operation includesadditional time overhead above and beyond program/verify, this smallerdifference in program speed may translate, in practice, to only a minorreduction in overall write speed as compared to binary encoded writing.

[0111] Cell Programming Operation—Verify Phase Specific

[0112] Cell verify can also be made state specific, using the sameCGRE/NSP engine described above with reference to FIG. 17, by loadingthe targeted verify voltage (i.e. that value corresponding to theto-be-programmed data) into its associate CGRE. In this embodiment,unlike the read operation, for which VCG is changed during the readbinary search flow, during the verify operation the state specific VCGverify voltage is kept fixed during the full program/verify flow (i.e.NSP for verify remains unchanged). In this way, all cells within a chunkare verified simultaneously, with further programming locked out, on acell by cell basis, as each cell passes the verify operation.

[0113] This data conditional, high performance verify embodimentcomplements the above described high performance, data conditionalprogramming embodiment, offering a highly parallel, fast speedmethodology for setting a many level multi-state memory. In oneembodiment, in order to better exploit this capability, two differentCGRE/NSP circuits are used, as illustrated in FIG. 18. CGRE/NSP circuit91 is used to support programming, and CGRE/NSP 92 is used for verify,allowing these two circuits to be multiplexed at high speed onto thecontrol gate when changing between programming and verify operations.

[0114] Although using the individual, cell by cell VCG supply as in thisembodiment, offers an excellent approach to supporting a high level ofmulti-state at high speed, it puts the burden on quickly providing allthese VCG voltages. In one embodiment, all the possible voltage stepsare generated and available simultaneously on a bus of voltage feedlines. In this embodiment, each CGRE value is used to decode which oneof these feed lines to connect to its corresponding control gate. Thisembodiment is attractive when there aren't too many VGC levels tomanage. Since in principal only seven compare points are needed fordiscriminating 8 states (and only 15 compare points are needed fordiscriminating 16 states), this will often be suitable. However, thislimits the high speed flexibility to dynamically tune the sense pointsand determine margins. If the need for attaining such full resolution isvery rare (as for example when ECC indicates a memory state failure or amarginality problem), an alternative, hybrid embodiment is providedwhich only demands such capability rarely (e.g. on the rare ECC flag).On those rare occasions, those compare points are incrementally shiftedto fully resolve the margins, albeit via a more time consumingprocedure, because now voltage values will need to be provided which arenot included in the limited set of supply levels (e.g. 7 to 15 levels)concurrently available. This would dictate temporarily generating newvoltage levels, not concurrently available, consuming more time, andpotentially breaking up the concurrent parallel chunk operation intooperations on individual bits or small groups of bits to feed thesespecialized voltage levels.

[0115] In the case where a large number of VCG voltage possibilitiesand/or all VCG voltage possibilities are required (i.e. full real-timemargining capabilities for full dynamic range flexibility), onealternative embodiment, similar to the embodiment of FIG. 17, expandsthe CGRE X83 and NSP 191 elements to include sample-and-hold circuitryfor each sensing circuit, the complement of which are fed by a common,single staircase voltage source. The voltage delivered by each NSP isconditional on its corresponding stored CGRE value. Care must be takenin such an embodiment to ensure that the dynamic nature of sample andhold circuitry with its potential for drift, and the time requirementsfor scanning/sampling the full dynamic voltage range, do not causeprogramming voltage Vpg error. The benefit of this embodiment is that itincurs less area and power penalties.

[0116] It is desired to simultaneously process each of the CGRE data,based on the associated sense amplifier result and the previously storedvalue (as well as the step in progress in the case of read), conditionalon the operation in progress. This is most complex for read, involvingthe manipulation for successive approximation (basically providingup/down counting function, conditional on sensed result and currentiteration step). For programming and verify its requirements aresimpler, complexity coming primarily in initializing each of the CGREsto the corresponding data values; once initialized, nothing further isrequired for the verify, requiring only incrementing by one for eachsuccessive programming/verify step in the case of programming.Notwithstanding these complexities, required circuit areas andcomplexity of circuits should not differ substantially from approacheswhich use multiple sense amplifiers. The prior art approach usesmultiple sense amplifiers (e.g. requiring up to seven sense amplifiersfor 8-level multi-state). In accordance with this embodiment, themultiple sensing circuits and associated current mirrors and referencelegs are now replaced by one sense amplifier circuit, a couple ofregisters with associated decoder functions, sample and hold circuits,and some glue logic.

[0117] The other major element of complexity is that of shifting out andprocessing the large body of data stored in the chunk-wide CGREregister. One embodiment used is similar in this regard to thatdescribed in the above-referenced analog sensing embodiment.

[0118] Exemplary Cell Embodiments

[0119] Firstly, independent of other considerations, a memory cell mustbe competitive with respect to physically small size and scalability.Beyond that, however, based on the cell requirements described above fora row selectable but column steerable element, as represented in theexample of FIG. 13, the choices are limited.

[0120] Furthermore, in order to realize such a cell/array in minimalarea, it must incorporate virtual ground architecture, and this is notjust because of the approximately 50% additional area associated withusing the conventional ½ contact per cell array. The joint requirementof bit line and steering line running in the same direction, with thebit line having to physically run above yet periodically dropping belowthe steering line to contact diffusion, dictates that they run side byside rather than be stacked. Whereas this occurs naturally in thevirtual ground array, wherein active transistors are laterally displacedfrom the bit lines, in the conventionally contacted cell array theactive transistors, while displaced from the bit line contactsthemselves, do lie directly below the bit line conductor. For thisreason, select/steering functions in such arrays are generally roworiented, eliminating the conflict. To do otherwise further increasescell area.

[0121] One memory cell which meets all the above requirements is thevirtual ground, split gate cell having column oriented poly2 steeringgates and row oriented poly3 select gates. For reference purposes thiswill be referred to as cell embodiment 1. Such a cell can be programmedusing either conventional drain side programming, or source sideprogramming, depending on whether the poly3 select transistor isstrongly turned on or throttled down, respectively. Erase is also roworiented, using poly3 as the erase line, thereby achieving the roworiented sector. The source side programming version of this isdescribed in U.S. Pat. No. 5,313,421, assigned to Sandisk Corporation.For reference purposes, this version will be referred to as cellembodiment 1a.

[0122] Another suitable cell is the dual floating gate variant of cellembodiment 1a, such as is described in copending U.S. patent applicationSer. No. 08/607,951 filed Feb. 28, 1996 and assigned to SandiskCorporation, which offers a true cross-point cell (4*lambda² perphysical bit). For reference purposes this version will be referred toas cell embodiment 2. However, because of the series nature of thetri-gate structure (the two floating gate channels being in series), itis constrained to using source side programming, and will be morelimited in how many levels of multi-state are realizable. Neverthelessits inherently smaller cell size, self-alignment features and consequentscalability make it equally attractive to the simpler but somewhatlarger cell embodiment 1a.

[0123] Column Pitch/Segmentation Options

[0124] Because of the requirement within each cell to have both bit lineand steering line (control gate) running parallel to each other (forconvenience, their direction henceforth defined as vertical), thisraises the question of bussing/pitch requirements. To achieve aphysically minimal cell, this dictates that the lateral extent(horizontal width) of the cell must be close to minimum feature pitch(i.e. about 2*lambda), forcing the above two lines to fit in that pitch.At the cell level this is not a problem, since the steering line and bitlines tend to run side by side, and more importantly they are ondifferent layers (poly3 and BN+, respectively) eliminatingproximity/overlay constraints. However, going from the local to theglobal interconnect level is a challenge.

[0125] For ultra high density Flash memory, one way to interface longbit line columns to the memory cell array is via column segmentation.This approach uses the continuous (vertically) running metal lines asglobal bit lines, which drop down periodically to local diffusionsserving memory sub-arrays or “segments” (e.g. 16 sectors) via segmentselect switching transistors. In this way array segments are isolatedfrom one another, eliminating the large cumulative parasitics of leakagecurrent and capacitance, and providing column associated defect andrepetitive disturb confinement. This also provides opportunity forrelaxing the pitch requirement of the global bit lines from one per cellto one per two cells, depending on the segment selection approach used(e.g. U.S. Pat. No. 5,315,541 assigned to Sandisk Corporation).

[0126] With respect to the steering line, first consider the cell/arrayusing cell embodiment 1, which requires one steering line per column ofcells. One possibility is to have this be a continuous global line, i.e.running continuously (vertically) through the entire memory array.Running through the memory cell sub-array portion poses no obstacles,readily fitting within the existing pitch. However, it may run intoobstacles when trying to cross the segment select portions, which boundthose sub-arrays. Other issues with this approach are the associatedlarge RC time constants (impacting speed of charging and discharging along, resistive line), and the increased array exposure to repetitivedisturb.

[0127] For those reasons, segmentation is also desirable for thesteering function. Consequently, given that at most one metal line canbe run in the pitch of one cell, both global metal bit lines and globalsteering lines can be shared between pairs of cells. Such sharing in thecase of a global metal bit line is described in the above referencedU.S. Pat. No. 5,315,541. It uses a staggered, interlaced segmentationarchitecture with a transfer network driven by four decode lines persegment pair, thereby allowing each metal bit line to run in the pitchof two cells.

[0128] Similar sharing can also be achieved for the steering lines, anexample of which is shown in FIG. 19 (and this is only one of manypossible configurations). In this embodiment, there are four steeringtransfer lines driving the transfer matrix, with one global steeringline per two cell columns within the segment. When cells are selected,the steering transfer network connects the corresponding local steeringlines to unique global steering lines (e.g. Sk connected via SDTI4)).Each selected global steering line is connected in turn by the chunkselect (i.e. column or y-select) circuitry to the CGRE circuitry.

[0129] Those steering lines which are not currently active may befloated or held at ground. If grounded, this raises the possibility ofhaving a subset of the local steering lines, associated with a subset ofcells which are not being operated on currently, to be held at groundthrough appropriate enabling of other SDT lines. An example, referringto FIG. 19: Let Sk be the selected global steering line, and SDTI4 bethe selected transfer selected line. If it is not desirable to havesteering potential applied to unselected cells on the selected row,SDTI3 should be held at ground. However, both SDTI1 and SDTI2 can beturned on allowing the neighboring cells on either side of the selectedcell to have grounded steering lines.

[0130] The reason that it may be undesirable to have unselected cells onselected rows receive high steering potential comes primarily duringprogramming, when channels are conducting. Even here however, the biasconditions on unselected cells are interchanged vis a vis source anddrain, and see lower drain to source potentials, eliminating parasiticprogramming. Given this, in another embodiment, the four SDT selectlines per segment are replaced with a single SDT line, simplifyingdecoding, and potentially reducing layout area (although because ofnarrow cell pitch, area reduction is primarily governed by selecttransistor and vertical interconnect related dictates).

[0131] Having floating local steering lines (e.g. in all the unselectedsegments) does raise issues. It is undesirable that any of these linesdrift to or are left at such a high potential that they can promotedisturbs. However, with properly designed transfer transistors, whichremain solidly cut off when unselected, diffusion leakage will maintainfloating steering plates at ground (i.e. at substrate potential). Inaddition, by making sure that all actively driven steering lines arefully discharged before isolating them, this will insure that allsteering lines are close to ground at all times except when actuallyselected/driven.

[0132] In addition to disturbs, large voltages on control gates ofunselected cells results in the potential of introducing excessiveadjacent cell leakage, impacting proper multi-state setting and sensing.However, this is not an issue for the above-mentioned cell embodiment 1implementation when voltage sensing is used, by virtue of their poly3select function being independent of the sensing related steeringfunction. This allows the select transistor to be throttled down, (i.e.biased to a minimal turn-on level such as ≦5μAmps), with thestate-determining conduction occurring when the control gate reaches orexceeds the floating gate transistor's turn-on (or margin) voltage. Thisselect transistor limited current strategy guarantees that, independentof how strongly conducting the floating gate channel may be, parasiticadjacent cell leakage problems are completely eliminated.

[0133] The same strategy can be applied to the dual floating gate cellembodiment 2, as illustrated in FIG. 20. In this embodiment, the unitmemory cell, consisting of two floating gate elements and taking up thepitch of 4*lambda, has associated with it a single bit line diffusion(the other bounding bit line diffusion being associated with theneighboring cell). Therefore, global metal bit lines are naturallyreduced to one line per 4*lambda. This also facilitates laying out thesegment transistor matrix (e.g. non-interlaced, fully confinedsegmentation via a one-to-one segment transistor to local BN+network),and requires only one segment select line per array segment. Thesteering transfer matrix is driven by two transfer lines per segment,coupled with global (metal) steering lines laid out in the pitch of oneline per 4*lambda.

[0134] When a transfer line is enabled, it turns on the steeringselection transistors for both of the control gates within a cell, foreach alternate cell. Each of these two control gates within each of theselected cells are driven by a unique global steering line, which, as inthe above described cell embodiment 1 case, are driven, in turn, by thesegment select and CGRE circuitry. Also, as in the cell embodiment 1case, the issue of floating local steeling lines exists, with similarresolution.

[0135] With either cell embodiment, in order to fully capitalize onspeed, it is important to make the chunk size as large as possible,maximizing parallelism. Because of the low cell read and programmingcurrents inherent to both cell embodiment 1 and 1 a approaches, peakpower is not an issue, nor is adjacent cell leakage, which becomesinsignificant. Consequently, the number of floating gates per chunkwhich can be simultaneously operated on is limited only by segmentdecode restrictions. With the segmentation approach described, thisallows every fourth floating gate to be addressed and operated on,simultaneously, in both cell variants.

[0136] In the case of cell embodiment 1, every fourth diffusion isbrought to drain potential, and there are three cells under reversed D/Sbias conditions between the drain and the next driven ground. Once thefirst set of cells is completed operation proceeds to the neighboringset. After the fourth such repetition, the full row is completed.

[0137] In the dual floating gate embodiment 2 case, wherein every othercell is selected, the biasing approach is different. Two adjacentdiffusions are driven to drain potential followed by two adjacentdiffusions driven to ground, with that pattern repeated over and over.In this way global D/S bias is applied in mirrored fashion to everyother of the selected cells, resulting in floating gate of odd selectedcells being the opposite of the even selected cells. Appropriate biasesare placed on the global steering lines to satisfy the operation of thetargeted floating gates. Once done, the bias conditions for both globalbit/gnd lines and targeted/untargeted floating gate steering lines arecorrespondingly interchanged to act on the other floating gate in theselected cells. Once finished, similar operation is repeated to thealternate set of cells, completing full row programming in 4 passes.

[0138] To give an idea of the power of this approach, in a physical rowof 1500 floating gate elements, encoded in 8-state (three bits percell), 375 physical bits or 1125 logical bits are being operated on atone time. Assuming it takes nine pulses to complete programming, thisgives a programming rate of 125 logical bits or about 16 bytes perprogramming pulse, plus similar gains in performance achievable forread. Existing two-state based flash products, by way of comparison,program around 32 bytes per programming pulse, putting the multi-stateapproach potentially within a factor of two in write speed.

[0139] As described above in this portion of this specification, thecell-by-cell column oriented steering approach, realizable in the twosource side injection cell embodiments (standard and dual floating gateembodiments), increases the performance of high level multi-statesignificantly, improving both its write and read speed. It achieves thisby applying, in parallel, custom steering conditions needed for theparticular state of each cell. This offers substantial reduction in thenumber of individual programming steps needed for write, and permitspowerful binary search methodology for read, without having to carry outfull sequential search operations. Improved performance is furtherbolstered through increased chunk size, made possible here via the lowcurrent source-side injection mechanism, which allows every fourthfloating gate element to be operated on, thereby increasing chunk size.Although specific examples of array and segmentation architectures havebeen described, there are a wide variety of alternate options possiblewhich offer similar capabilities.

[0140] When combining the above concepts with those previously proposedA to D type sensing approaches, which support the greatest density ofmulti-state or “logical scaling” within a cell, this offers a powerfulapproach to achieving cost reduced, performance competitive mass storagememories, appropriate to the Gigabit density generation of products. Forexample, by achieving effective programming and read rates of about 50%that of two-state operation, this bridges the gap between multi-stateand two-state performance substantially, so much so that when theremaining overhead is included (i.e. those portions not directly relatedto chunk read or programming/verify steps), performance differences fromthose of two-state can become, for all practical purposes, a non-issue.Combining this with the 8 to 16 multi-level (3 to 4 bits) per cellcapability, translates to realizing competitively performing ultra-highdensity mass storage at a fraction of the cost per Megabyte (from onehalf to one third), of equivalent binary encoded memory.

[0141] Cell Erase Operation—Erase Distribution Tightening

[0142] The independent, bit line oriented steering feature describedearlier is, in certain embodiments, exploited to significantly tightenan initially wide erased cell population distribution. In a mass storagememory based on the memory cell/array implementations shown in FIGS. 19and 20, all cells in a sector or group of sectors are erasedsimultaneously, by applying a sufficiently high positive bias on thepoly3 erase electrode relative to the poly2 steering potential. Thisresults in electron tunneling from the poly1 floating gates to the poly3erase anode(s), as is described in the aforementioned copending U.S.patent application Ser. No. 08/607,951.

[0143] An important feature in this embodiment is the capacitivecoupling of the combined channel/drain component. It is designed to havea relatively low coupling to the floating gate as compared to thesteering element, thereby having only weak impact with respect to thevarious cell operations, including erase. For example, if the channelpotential during erase is the same as that of poly2 (e.g. both atground), the channel will provide only a slight assist to the steeringgate in the erasing operation, resulting in a slightly stronger erase,while if its potential is more positive than that of the steering gate(e.g. the steering gate bias is lowered negatively, for example to about−7 v, during erase, with the poly3 erase level lowered the same amount,while the channel potential remains at ground), it will contributeslightly less to erase. Nevertheless, once the poly3 is raised to theerasing potential, the main contributor to erasing a cell is thesteering element and its potential.

[0144] This strong dependence on steering gate potential provides adirect means for controlling the degree of erase on each cell,individually, in the column oriented steering embodiment. Operation isas follows. At the start of the erase operation, all steering lines arebiased at their erase enabling potential (e.g. −7 v), and a selected rowto be erased (generally this would be one row of a group of rowstargeted for erase) is pulsed to a sufficiently positive potential (e.g.5 v) to start the cell erasing process (removing a portion of theelectrons from some or all of the floating gates), but which isinsufficient to erase any of the cells within that row to the requiredfull erase margin. Once pulsing is completed, the row is biased into aread-at-erase-margins condition, and each cell is checked to see whetherit has erased to that margin or not. For any cells which have so erased(as wilt occur after subsequent erase pulses), their correspondingsteering lines will thereafter be biased into a non-erase-enabling or“lock-out” condition (e.g. at 0 v) for all subsequent erase pulsing tothat row during the remainder of that erasing session. This feature canbe accomplished by flipping latches associated with each of thebit/steering line columns. If one or more cells are still notsufficiently erased, the erase pulse is repeated, preferably at anincrementally higher poly3 voltage (e.g. 0.5 v higher, althoughincreasing time is used in an alternative embodiment), again followed bythe read-at-erase-margins operation.

[0145] This pulse/checking loop is repeated as necessary until all cellsbecome sufficiently erased (or until some other condition such asmaximum voltage, pulses, etc. kicks in, at which time defect managementoptions are invoked), terminating the erase operation to that row. Thisprocedure is then repeated on all the other rows targeted for erase, onerow at a time, until all rows/sectors so targeted are erased.

[0146] In this way all cells in a sector or group of sectors are bothsufficiently erased, and confined to a targeted, tight erasedistribution. This capability reduces wear under repeated write cycling,thereby increasing endurance. It is especially useful in speeding upmulti-state programming operations following erase, since now time doesnot have to be expended in bringing heavily overerased cells up to thatsufficiently erased condition.

[0147] The drawback of this embodiment is that erasing becomes much moretime consuming, replacing potentially one single erase pulse applied toall rows (or sectors) simultaneously, with a series of erase pulse/checkoperations on a row by row basis, since now only a single row can beerased at a time. This approach is most practical when the timeassociated with erase is hidden, eliminating its impact on writeperformance. Today there are a number of ways in which mass storagesystems eliminate erase related performance loss, including erase aheadapproaches and dynamic address mapping via RAM translation tables. Insuch systems, a tight erase distribution at the start of write canmeasurably increase write performance, especially with respect tomulti-state.

[0148] The above discussion assumes that each steering line is uniquelyassociated with one cell. However, because of layout pitch constraints,especially when implemented in a segmented steering architecture,several cells may share one global steering signal, examples of whichare shown in FIGS. 19 and 20, where each pair of cells are associatedwith one global steering line via steering drive segment transfer selecttransistors. Following are two embodiments utilizing such sharing.

[0149] One embodiment allows the sharing to take place in each eraseoperation, erasing all cells in one row simultaneously, as describedabove. In this case, however, erase lock-out on a group of cells (orfloating gate transistors in the case of dual floating gate cells)sharing a common steering line can only be invoked when all cells inthat group have achieved the required erased state margin. This willresult in a fraction of the cells becoming overerased as they wait forthe weakest cell in each group to achieve sufficient erasure. Forexample, if each sharing group consists of four cells, in general threecells will become overerased. FIG. 21 models the impact of this sharingapproach on a population of 5000 cells, the erase voltages of whichfollow a normal distribution with a one-sigma of 0.7 v. In the case oftwo-cell sharing, 50% of the cells will have minimal overerase, and theremainder will follow a normal distribution with a one-sigma of about 1v. Comparing this to the original distribution (i.e. without anylockout) shows that with lock-out much fewer cells are subjected toovererasure, at any level of overerase (i.e. they are further up thesigma tail), and the worst case overerase voltage is about 1.3 v lowerthan the original distribution's worst case overerase of about 4.7 v.The situation is similar in the case of four-cell sharing, with slightlyincreased levels of overerase to those of two-cell sharing.

[0150] A second embodiment takes advantage of the segment levelselection capability, thereby completely avoiding the sharinglimitation. Refining specifically to the previously describedembodiments, wherein one global steering line is shared by two localsteering lines (e.g. FIG. 19 and 20), the present embodiment exploitsthe segment steering line addressing capability to only drive one of thetwo local steering lines in each cell pair (or half the row's worth ofcells) during each erase operation. The unaddressed cell's localsteering lines are precharged and floated at the non-erase-enablingvoltage condition (e.g. 0 v). Once the addressed half row's worth ofcells are taken through their erase/verify/lockout operations tocompletion, the steering address is shifted to the other, previouslyunaddressed cell group half, which are then erased to completion, whilethe first group of cells are maintained in the non-erase-enablingcondition. Although this approach doubles the total erase time comparedto using a single erase pulse for the entire row, it will have no impactto write performance in erase-hidden implementations, while it doesmaintain the desirably tight erase distribution.

[0151] In an alternative embodiment, the above controlled overerasemethodology is used to write the multi-state data, with the hot electronprogramming mechanism relegated to the data unconditional presetoperation. While optimum write bias conditions and disturb preventionwould depend on specific cell and tunneling characteristics, such atunneling based write approach is made possible by the fundamental cellarray architecture, consisting of the independently controllable columnsteering feature, plus the bit-by-bit lock-out capability of the abovedisclosed memory concept relating to FIGS. 19 and 20.

[0152] A variety of alternative embodiments of this invention have beentaught, which provide improved performance and cost efficiency formulti-state memory devices and systems. The invention now being fullydescribed, it will be apparent to one of ordinary skill in the art thatmany changes and modifications can be made thereto without departingfrom the spirit or scope of the appended claims.

[0153] All publications and patent applications mentioned in thisspecification are herein incorporated by reference to the same extent asif each individual publication or patent application was specificallyand individually indicated to be incorporated by reference.

What is claimed is:
 1. A multi-state memory comprising: a plurality ofEEPROM memory cells, each for storing one of a plurality ofmulti-states, organized into a plurality of sectors; one or moretracking cells for each of said multi-states, associated with each ofsaid plurality of sectors; read circuitry for reading raw dataassociated with the programmed state of said tracking cells; convertercircuitry for converting said raw data to digital form; and a memorycontroller for establishing desired read points for each of a pluralityof physical states, based upon said raw data converted to digital formread from each said tracking cell.
 2. A multi-state memory comprising: aplurality of EEPROM memory cells, each for storing one of a plurality ofmulti-states, organized into a plurality of sectors, each sectorcomprising an array of rows and columns; cell operating circuitrycomprising: sense circuitry organized in a column oriented manner;steeling elements organized in a column oriented manner; and selectcircuitry organized in a row oriented manner, wherein one or moreselected cells along a row are capable of being read simultaneously; areference source; verification circuitry for selected cells for applyingto associated steering elements of said selected cells conditionscorresponding to verification of corresponding write state and forreceiving read data using said reference source for determining if aselected one of said memory cells has been adequately programmed to theconduction characteristics associated with a desired programmed state;and write circuitry organized in a column oriented manner, wherein aselected one or more of said memory cells are capable of being writtensimultaneously with associated steering elements set to correspondingwrite states, and including termination circuitry for terminating theprogramming of selected memory cells along said row being programmedwhen said verification circuitry indicates said selected memory cellshave been adequately programmed to their desired states.
 3. A memory asin claim 2 wherein said reference comprises an adjustable referencecapable of presenting a plurality of reference values, each associatedwith one of said multi-states.
 4. A memory as in claim 3 wherein saidreference comprises a stairstep current source.
 5. A memory as in claim2 wherein said reference comprises a plurality of reference values, eachassociated with one of said multi-states.
 6. A memory as in claim 5wherein each of said reference values comprises a current source.
 7. Amemory as in claims 3 or 5 wherein said write circuitry operates towrite a selected set of cells along a selected row, independentlyterminating said programming of each of said selected set of cells whensaid verification circuitry indicates that level of programming has beenachieved.
 8. A memory as in claim 2 further comprising a memorycontroller for establishing desired read points for each of a pluralityof physical states, based upon said raw data converted to digital formread from each said tracking cell.
 9. A memory as in claims 1 or 8wherein a sector is the smallest erasable unit.
 10. A memory as inclaims 1 or 8 wherein said memory controller also determines a physicalto logical state translation of each sector.
 11. A memory as in claims 1or 8 wherein said memory controller also determines the quality of dataread from each cell.
 12. A memory as in claims 1 or 8 wherein saidtracking cells are read periodically to establish said read comparepoints.
 13. A multi-state memory as in claim 12 wherein said trackingcells are read in the event of a failure in order to establish said readcompare points.
 14. A memory as in claims 1 or 8 wherein said trackingcells are read as part of normal read operations in order to reestablishsaid read compare points.
 15. A memory as in claims 1 or 8 wherein saidraw data comprises memory cell current measurements.
 16. A memory as inclaims 1 or 8 wherein said compare points are established with anoptimum margin established based upon the raw data read from saidtracking cells.
 17. A memory as in claims 1 or 8 wherein said memorycontroller also establishes poor margin compare points.
 18. Amulti-state memory as in claim 17 wherein said poor margin comparepoints are used to provide a measure of the quality of data read frommemory cells.
 19. A multi-state memory as in claim 18 wherein saidmemory controller, in response to determining that read data has poormargin, causes said data to be rewritten.
 20. A multi-state memory as inclaim 19 wherein said rewriting of data is performed on a cell basis ifthe poor margin read data requires a cell to be moved to a moreprogrammed state.
 21. A multi-state memory as in claim 19 wherein saidrewriting of data is performed on a sector basis if the poor margin readdata requires a cell to be moved to a less programmed state.
 22. Amulti-state memory as in claim 21 wherein said reprogramming isperformed by erasing the sector, and then reprogramming the sector. 23.A memory as in claim 19 which further comprises a counter formaintaining a count of the number of times data is rewritten in responseto poor margin and, upon reaching a predetermined count, causes selectedones of said memory cells to be mapped out rather than rewritten.
 24. Amemory as in claim 23 which comprises one such counter per sector.
 25. Amemory as in claims 1 or 8 wherein said memory cells and said memorycontroller are contained on a single integrated circuit.
 26. A memory asin claims 1 or 8 wherein said memory cells are contained in one or moreintegrated circuits, and said memory controller is contained on anotherintegrated circuit.
 27. A memory cell comprising: a read/write path; aread only path; and a floating gate common to said read/write and saidread only paths.
 28. A memory cell as in claim 27 wherein both saidread/write and said read only paths are used during reading.
 29. Amemory comprising: a plurality of EEPROM memory cells organized into aplurality of sectors, each sector including at least one wear detectingcell comprising: a read/write path; a read only path; and a floatinggate common to said read/write and said read only paths; and controlcircuitry for detecting the difference in conduction characteristics ofsaid read/write and read only paths during reading, to measure theamount of wear of said wear detecting cell.
 30. A memory as in claim 29which further comprises: replacement sectors for replacing those ones ofsaid sectors having associated wear detecting cells which exhibitexcessive wear.
 31. A memory as in claim 29 wherein said controlcircuitry causes both said read/write and said read only paths to beoperated during each reading of a memory cell.
 32. A memory as in claim29 wherein said control circuitry causes both said read/write and saidread only paths to be periodically operated.
 33. A memory as in claim 32wherein both said read/write and said read only paths are operated basedon one or more of the following events: data read failure, data readpoor marginality, passage of time, number of read cycles, number ofwrite cycles, and number of erase cycles.
 34. A memory as in claim 32wherein both said read/write and said read only paths are operated basedon a random number generator.
 35. A method of operating a memory whichcomprises a plurality of word lines, and a plurality of EEPROM memorycells, each cell uniquely associated with one word line and one bitline, each memory cell having a floating gate electrode, a steeringelectrode, and an erase electrode, said method comprising the steps of:selecting one or more of said memory cells along a row; controlling themagnitude of a steering voltage applied to said steering electrodes ofsaid selected one or more memory cells, on a cell by cell basis;establishing erase potentials on said selected one or more memory cells,thereby removing charge from said floating gates of said selected one ormore memory cells, wherein the magnitude of electron removal from eachfloating gate is established on a cell by cell basis by the magnitude ofthe steering potential applied to its associated steering electrode. 36.A method as in claim 35 which further comprises the steps ofiteratively: pulsing said erase potentials; determining which cells havebeen adequately erased; and again pulsing said erase potentials forthose cells which have not been adequately erased and terminatingapplication of said erase potentials on cells which have been adequatelyerased.
 37. A method as in claims 35 or 36 wherein said erasure servesto write data to said selected memory cells.
 38. A method as in claim 37wherein said data is represented by less or equal charge on saidfloating gates than the amount of charge on said floating gates prior tosaid erasure.
 39. A method as in claim 38 wherein said data comprisesmulti-state data.
 40. A method as in claim 38 wherein establishing saidamount of charge on said floating gates prior to said erasure isaccomplished by hot electron programming from a source region of saidmemory cell to said floating gate of said memory cell.
 41. A method asin claim 35 which further comprises the steps of: dividing said wordline of memory cells into a plurality of subsets of memory cells;simultaneously erasing each of said subsets of memory cells; andterminating the erasure of each of said subsets of memory cells on acell by cell basis when all memory cells in a given subset have beenadequately erased, regardless of whether erasure of others of saidsubsets of memory cells has been completed.